ds30296 rev. 7 - 2 1 of 7 cta2 p1n www.diodes.co m ? diodes incorporated characteristic symbol value unit power dissipation (note 2) p d 150 mw thermal resistance, j unction to ambient (note 2) r q ja 833 c/w operating and storage and temperature range t j , t stg -55 to +150 c features maximum ratings, tot al device @ t a = 25 c unless otherwise s pecified a m j l d b c h k g f a 8 0 maximum ratings, q 1, mm bt4403 pnp transistor elem ent @ t a = 25 c unless otherwise s pecified t c u d o r p w e n cta2p1 n compl ex transisto r array characteristic symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5.0 v collector current - continuous i c -600 ma maximum ratings, q 2, 2n7002 n-channel m osfet element @ t a = 25 c unless otherwise s pecified characteristic symbol value units drain-source voltage v dss 60 v drain-gate voltage r gs 1.0m w v dgr 60 v gate-source voltage continuous pulsed v gss 20 40 v drain current (note 2) continuous continuous @ 100c pulsed i d 115 73 800 ma notes: 1. no purposefully added lead. mechanical data case: sot-363 case material: molded pl astic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j- std-020c terminals: solderable per mil-std-202, method 208 lead free plating (matte tin finish annealed over alloy 42 leadframe). terminal connections: see diagram marking: a80, see page 3 ordering information: see page 3 weight: 0.006 grams (approx.) combines mmbt4403 type transistor with 2n7002 type mosfet small surface mount package npn/p-channel complement availabl e: cta2n1p lead free /rohs co mpliant (note 1 ) sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j ? 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 a 0 8 all dimensions in m m b q 1 s q 2 d q 2 e q 1 c q 1 g q 2 q 2 q 1
ds30296 rev. 7 - 2 2 of 7 cta2 p1n www.diodes.co m electri cal character isti cs, q1, mmbt4403 pnp transist or element @ t a = 25 c unless otherwise s pecified t c u d o r p w e n electri cal character isti cs, q2, 2n7002 n-channel mo sfet element @ t a = 25 c unless otherwise s pecified characteristic symbol min max unit test condition off characteristics (note 3) collector-base breakdown voltage v (br) cbo -40 ? v i c = -100 m a, i e = 0 collector-emitter breakdown voltage v (br)ceo -40 ? v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v (br) ebo -5.0 ? v i e = -100 m a, i c = 0 collector cutoff current i cex ? -100 na v ce = -35v, v eb (off) = -0.4v base cutoff current i bl ? -100 na v ce = -35v, v eb (off) = -0.4v on characteristics (note 3) dc current gain h fe 30 60 100 100 20 ? ? ? 300 ? ? i c = -100a, v ce = -1.0v i c = -1.0ma, v ce = -1.0v i c = -10ma, v ce = -1.0v i c = -150ma, v ce = -2.0v i c = -500ma, v ce = -2.0v collector-emitter saturation voltage v ce (sat) ? -0.40 -0.75 v i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma base-emitter saturation voltage v be (sat) -0.75 ? -0.95 -1.30 v i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma small signal characteristics output capacitance c cb ? 8.5 pf v cb = -10v, f = 1.0mhz, i e = 0 input capacitance c eb ? 30 pf v eb = -0.5v, f = 1.0mhz, i c = 0 input impedance h ie 1.5 15 k w v ce = -10v, i c = -1.0ma, f = 1.0khz voltage feedback ratio h re 0.1 8.0 x 10 -4 small si gnal current gain h fe 60 500 ? output admittance h oe 1.0 100 m s current gain-bandwidth product f t 200 ? mhz v ce = -10v, i c = -20ma, f = 100mhz switching characteristics delay time t d ? 15 ns v cc = -30v, i c = -150ma, v be (off) = -2.0v, i b1 = -15ma rise time t r ? 20 ns storage time t s ? 225 ns v cc = -30v, i c = -150ma, i b1 = i b2 = -15ma fall t ime t f ? 30 ns characteristic symbol min typ max unit test condition off characteristics (note 3) drain-source break down voltage bv dss 60 70 ? v v gs = 0v, i d = 10 m a zero gate voltage drain current @ t c = 25c @ t c = 125c i dss ? ? 1.0 500 a v ds = 60v, v gs = 0v gate-body leak age i gss ? ? 10 na v gs = 20v, v ds = 0v on characteristics (note 3) gate thres hold voltage v gs ( th ) 1.0 ? 2.0 v v ds = v gs , i d =-250 m a static drain-source on-resistanc e @ t j = 25c @ t j = 125c r ds (on) ? 3.2 4.4 7.5 13.5 w v gs = 5.0v, i d = 0.05a v gs = 10v, i d = 0.5a on-state drain current i d(on) 0.5 1.0 ? a v gs = 10v, v ds = 7.5v forward transc onductance g fs 80 ? ? ms v ds =10v, i d = 0.2a dynamic characteristics input capacitance c iss ? 22 50 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss ? 11 25 pf reverse t ransfer capac itance c rss ? 2.0 5.0 pf switching characteristics turn-on delay time t d (on) ? 7.0 20 ns v dd = 30v, i d = 0.2a, r l = 150 w , v gen = 10v, r gen = 25 w turn-off delay time t d (off) ? 11 20 ns note: 2. device mounted on fr-4 pcb; pad layout as show n on diodes inc. suggested pad layout document ap02001, which can be found on our website at http: //www.diodes.com/datasheets/ap02001.pdf . 3. short test pulse used to minimize s elf-heating ef fect.
ds30296 rev. 7 - 2 3 of 7 cta2 p1n www.diodes.co m notes: 4. for packaging details, go to our website at http: //www.diodes.com/datasheets/ap02007.pdf . (note 4) device packaging shipping CTA2P1N-7-F sot-363 3000/tape & reel orderi ng inform ation month jan feb march apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d date code key a 8 0 y m marking i nformat ion t c u d o r p w e n year 2001 2002 2003 2004 2005 2006 2007 2008 2009 code m n p r s t u v w a80 = product type mark ing code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september
ds30296 rev. 7 - 2 4 of 7 cta2 p1n www.diodes.co m t c u d o r p w e n 0. 1 1 10 10 0 v , b a s e e m i t t e r v o l t a g e ( v ) b e ( o n ) i , c o ll e c tor c u r r e n t (m a ) c fi g. 4 b as e- e m itt er v ol tag e vs . c ol le ct or c ur re nt t = 2 5 c a t = -5 0 c a v = 5v ce t = 15 0 c a 0. 2 0. 3 0. 4 0. 5 0. 9 0. 8 0. 7 0. 6 1. 0 1 1 0 1 0 0 1 0 0 0 v , c o l l e c t o r t o e m i t t e r c e ( s a t ) s a t u r a t i o n v o l t a g e ( v ) i , c o l l e c to r c u r r e n t ( m a ) c f ig . 3 c o ll e c to r e m it te r s a tu ra ti o n v o lta g e v s . c o ll e c to r c u rr e n t t = 2 5 c a t = 5 0 c a t = 1 5 0 c a 0 0 .1 0 .2 0 .3 0 .4 0 .5 i c i b = 1 0 i , b as e c u r r en t (m a) b fi g. 2 t yp ic al c ol le ct or s at ur at io n r eg io n v , c o l l e c t o r - e m i t t e r v o l t a g e ( v ) c e 0 . 0 0 1 0 . 0 1 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 0 . 1 1 1 0 1 0 0 i = 1m a c i = 10 m a c i = 30 m a c i = 10 0m a c i = 30 0m a c 1 . 0 5 . 0 2 0 1 0 3 0 - 0 . 1 - 1 0 - 1 . 0 - 3 0 c a p a c i t a n c e ( p f ) r e v e r s e v o l t a g e ( v ) f ig . 1 t y p ic a l c a p a c ita n c e c o b o c ib o mmbt4403 secti on
ds30296 rev. 7 - 2 5 of 7 cta2 p1n www.diodes.co m t c u d o r p w e n 0 5 0 1 0 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 2 0 0 p , p o w e r d i s s i p a t i o n ( m w ) d t , a m b ie n t t e m p e r a t u r e ( c ) a f ig . 7 m a x p o w e r d is s ipa ti o n v s a m b ie n t t e m p e ra tu re ( t o tal d e v ic e ) 1 5 0 2 0 0 0 1 100 1000 1 10 100 f , g a i n b a n d w i d t h p r o d u c t ( m h z ) t i , collec t or cur rent (ma) c fig. 6 ga in bandw idth product vs. colle ctor curre nt 10 v = 5v ce 1 100 1000 1 10 100 1000 h , d c c u r r e n t g a i n f e i , col lector cur rent (ma) c fig. 5 dc c urrent gain vs. co llector curre nt 10 v = 5v ce t = 25 c a t = -50 c a t = 150 c a mmbt4403 secti on
ds30296 rev. 7 - 2 6 of 7 cta2 p1n www.diodes.co m t c u d o r p w e n 2n7002 section 0 2 1 4 3 0 0 . 2 0 . 4 0 . 6 0 . 8 1 v g a t e s o u r c e v o l t a g e ( v ) g s , i , d r a i n c u r r e n t ( a ) d f i g . 1 2 ty p i c a l tr a n s f e r c h a r a c t e r i s t i c s ( 2 n 7 0 0 2 ) 6 5 8 7 1 0 9 v = 1 0 v d s t = - 5 5 c a t = + 2 5 c a t = + 1 2 5 c a t = + 7 5 c a 0 v , g a t e t o s o u r c e v o l t a g e ( v ) g s f i g . 1 1 o n - r e s i s ta n c e v s . g a t e - s o u r c e vo l ta g e ( 2 n 7 0 0 2 ) i = 5 0 m a d i = 5 0 0 m a d 1 2 3 4 5 6 0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 1. 0 1. 5 2. 0 2. 5 3. 0 -5 5 -3 0 -5 20 45 70 95 12 0 14 5 t , j un ct io n te m pe ra tu re ( c) j fi g. 1 0 o n- re sis tanc e vs ju nc tio n t em pe ra tu re (2 n7 00 2) v = 10 v , gs i = 20 0m a d 0 1 2 3 4 5 0 0 . 2 i , d r a i n c u r r e n t ( a ) d f i g . 9 o n - r e s i s ta n c e v s d r a i n c u r r e n t ( 2 n 7 0 0 2 ) v = 5 . 0 v g s t = 2 5 c j v = 1 0 v g s 6 7 0 . 4 0 . 6 0 . 8 1 . 0 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 0 1 2 3 4 5 i , d r a i n - s o u r c e c u r r e n t ( a ) d v , d r a i n - s o u r c e v o l t a g e ( v ) d s f i g . 8 o n - r e g i o n c h a r a c t e r i s t i c s ( 2 n 7 0 0 2 ) v = 1 0 v g s 9 . 0 v 8 . 0 v 7 . 0 v 6 . 5 v 6 . 0 v 5 . 0 v 4 . 5 v 4 . 0 v 3 . 5 v 3 . 0 v 2 . 5 v 2 . 0 / 1 . 0 v 5 . 5 v 5 . 0 v
ds30296 rev. 7 - 2 7 of 7 cta2 p1n www.diodes.co m ? diodes incorporated i m p o r t a n t n o t i c e d i o d e s , i n c . a n d i t s s u b s i d i a r i e s r e s e r v e t h e r i g h t t o m a k e c h a n g e s w i t h o u t f u r t h e r n o t i c e t o a n y p r o d u c t h e r e i n t o m a k e c o r r e c t i o n s , m o d i f i c a t i o n s , e n h a n c e - m e n t s , i m p r o v e m e n t s , o r o t h e r c h a n g e s . d i o d e s , i n c . d o e s n o t a s s u m e a n y l i a b i l i t y a r i s i n g o u t o f t h e a p p l i c a t i o n o r u s e o f a n y p r o d u c t d e s c r i b e d h e r e i n ; n e i t h e r d o e s i t c o n v e y a n y l i c e n s e u n d e r i t s p a t e n t r i g h t s , n o r t h e r i g h t s o f o t h e r s . t h e u s e r o f p r o d u c t s i n s u c h a p p l i c a t i o n s s h a l l a s s u m e a l l r i s k s o f s u c h u s e a n d w i l l a g r e e t o h o l d d i o d e s i n c o r p o r a t e d a n d a l l t h e c o m p a n i e s w h o s e p r o d u c t s a r e r e p r e s e n t e d o n o u r w e b s i t e , h a r m l e s s a g a i n s t a l l d a m a g e s . l i f e s u p p o r t t h e p r o d u c t s l o c a t e d o n o u r w e b s i t e a t w w w . d i o d e s . c o m a r e n o t r e c o m m e n d e d f o r u s e i n l i f e s u p p o r t s y s t e m s w h e r e a f a i l u r e o r m a l f u n c t i o n o f t h e c o m p o n e n t m a y d i r e c t l y t h r e a t e n l i f e o r c a u s e i n j u r y w i t h o u t t h e e x p r e s s e d w r i t t e n a p p r o v a l o f d i o d e s i n c o r p o r a t e d .
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